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           Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Schottky Barrier Diode RB051L-40 ?Applications ?Dimensions (Unit : mm) ?Land size figure (Unit : mm) General rectification ?Features 1)Small power mold type.（PMDS） 2)Low VF 3)High reliability ?Construction Silicon epitaxial planar ?Structure ?Taping specifications (Unit : mm) ?Absolute maximum ratings (Ta=25°C) Parameter LimitsSymbol Unit Reverse voltage (repetitive peak) 40VRM V Reverse voltage (DC) 20VR V Average rectified forwarfd current 3Io A IFSM A Tj °C125 Tstg °C?40 to ?125 ?Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions VF1 - - 0.35 V IF=1.0A VF2 - - 0.45 V IF=3.0A IR1 --1mAVR=20V IR2 - - 150 μA VR=15V Forward voltage Reverse current Storage temperature (*1) Mounted on epoxyboard. 180°Half sine wave Parameter Forward current surge peak （60Hz?1cyc） 70 Junction temperature PMDS 2.0 4.2 2.0 4.0±0.1 2.9±0.1 4.0±0.1 2.0±0.05 φ1.55±0.05 5.5±0.05 1.75±0.1 12±0.2 φ1.55 9.5±0.1 0.3 5.3±0.1 0.05 |